Title:
HIGHLY REVERSE RESISTANCE TYPE DIODE DEVICE
Document Type and Number:
Japanese Patent JPS6247170
Kind Code:
A
Abstract:
A highly blocking diode structure having a thin film a-Si:H (amorphous silicon containing hydrogen) layer, suitable for use in constructing image sensor arrays, has two conductive electrodes disposed on opposite sides of the a-Si:H thin film layer. The structure is constructed on an electrically insulating substrate and includes a barrier layer disposed between the a-Si:H layer and the top electrode. The top electrode may consist of indium tin oxide or of palladium silicide, and the barrier layer may consist of silicon oxide produced by converting the surface of the a-Si:H layer. The barrier layer is disposed on that side of the a-Si:H layer opposite the substrate. The barrier layer significantly improves the behavior of the contacts and the stability of the boundary surface between the a-Si:H layer and the transparent metal oxide comprising the electrode. The sequence for constructing the diode arrangement is considerably simplifed.
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Inventors:
HOHEISEL MARTIN (DE)
BRUNST GERHARD (DE)
HOLZENKAEMPFER ENNO (DE)
BRUNST GERHARD (DE)
HOLZENKAEMPFER ENNO (DE)
Application Number:
JP19514486A
Publication Date:
February 28, 1987
Filing Date:
August 20, 1986
Export Citation:
Assignee:
SIEMENS AG (DE)
International Classes:
H01L31/04; H01L21/31; H01L21/321; H01L27/146; H01L31/0224; H01L31/0376; H01L31/09; H01L31/10; H01L31/20; (IPC1-7): H01L27/14; H01L31/04; H01L31/10
Domestic Patent References:
| JPS5615086A | 1981-02-13 | |||
| JPS55151329A | 1980-11-25 | |||
| JPS5670675A | 1981-06-12 |
Attorney, Agent or Firm:
Tomimura Kiyoshi
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