HORIZONTAL HEMT AND METHOD OF MANUFACTURING HORIZONTAL HEMT

Title:

HORIZONTAL HEMT AND METHOD OF MANUFACTURING HORIZONTAL HEMT

Document Type and Number:

Japanese Patent JP2010267958

Kind Code:

A

Abstract:

To provide a horizontal HEMT having a high avalanche breakdown strength, and to provide a manufacturing method thereof.

The horizontal HEMT includes a substrate 10, a first layer 11 to serve as a first conduction type channel disposed on the substrate, and a second layer 12 to constitute an electron supply layer disposed at least partially on the first layer 11. The horizontal HEMT further includes a second conduction type semiconductor substance which is complementary to the first conductive type, and a third layer 13 disposed at least partially in the first layer 11. A PN diode is therefore formed between the first layer and the third layer, and the PN diode has a lower breakdown voltage than the horizontal HEMT, so that the HEMT is protected from a high electric field and prevented from being degraded.

Inventors:

HIRLER FRANZ
RIEGER WALTER
ZUNDEL MARKUS

Application Number:

JP2010097156A

Publication Date:

November 25, 2010

Filing Date:

April 20, 2010

Export Citation:

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Assignee:

INFINEON TECHNOLOGIES AUSTRIA

International Classes:

H01L29/778; H01L21/336; H01L21/338; H01L29/78; H01L29/786; H01L29/812

Domestic Patent References:

JP2009004398A	2009-01-08
JP2004260140A	2004-09-16

Attorney, Agent or Firm:

Kenzo Hara International Patent Office

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