Title:
HORIZONTAL MOS THYRISTOR
Document Type and Number:
Japanese Patent JP3257362
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a horizontal MOS thyristor wherein malfunction due to noise or the like is not generated and avalanche resistance is large.
SOLUTION: On the surface layer of an N region 1, a P drain region 16 adjacent to a P base region 6 is formed. On the N region 1 between the P base region 6 and the P drain region 16, a second gate electrode 15 connected with a gate electrode 5 is formed. A drain electrode 19 in the P drain region 16 is unified in a body with a cathode electrode 9, and a depletion type P-ch MOSFET is constituted. In the off-state of a MOS thyristor, a positive hole current is generated in the P-base region 6 when a sharp voltage is applied, and flows to the cathode electrode through the channel region of the P-ch MOSFET, so that malfunction of the MOS thyristor is not generated. In the case of ignition of the MOS thyristor, the second gate electrode 15 is kept at a positive potential, so that the P-ch MOSFET is in the off-state and ignition characteristics are not affected.
Inventors:
Hiroshi Shimabukuro
Application Number:
JP21150895A
Publication Date:
February 18, 2002
Filing Date:
August 21, 1995
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/74; H01L29/749; (IPC1-7): H01L29/749; H01L29/74
Domestic Patent References:
| JP5190836A | ||||
| JP2151070A |
Attorney, Agent or Firm:
Masaharu Shinobe