PURPOSE: To obtain a high hFE by a reduction in the base current and in the reactive current which flows to a silicon substrate and to obtain a transistor whose hFE is not increased stepwise by the increase of collector voltage by a method wherein a buried emitter layer of one conductivity type is formed on the main surface of a buried layer, of an opposite conductivity type, formed on a semiconductor substrate of one conductivity type.

CONSTITUTION: The following are provided: a buried layer 2, of an opposite conductivity type, formed on one main face of a semiconductor substrate 1 of one conductivity type; a buried emitter layer 3, of one conductivity type, formed on the surface of the buried layer 2; an epitaxial layer 4, of the opposite conductivity type, formed on the surface including the buried layer 2 and the buried emitter layer 3; a collector region 5, of one conductivity type, which has been formed in the epitaxial layer 4 around the emitter buried layer 3 and whose shortest distance with reference to the emitter buried layer 3 is decided inside a bulk. For example, an N+ type buried layer 2 is formed on a main face of a P-type silicon substrate 1; a P-type emitter buried layer 3 is formed on the N+ type buried layer 2. Then, an N- type epitaxial layer 4 is grown; a P-type emitter contact region 6, a ring-shaped P-type collector region 5 and an N+ type base contact region 7 are formed on the surface.