Title:
SEMICONDUCTOR MANUFACTURING APPARATUS
Document Type and Number:
Japanese Patent JP3198378
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To form a crystalline semiconductor film without damage by forming an insulation film covering a catalyst source film on an insulative substrate, forming an amorphous semiconductor film on the insulation film and crystallizing the amorphous film.
SOLUTION: A catalyst source film 3 is formed on the surface of an insulative substrate 2. An insulative film 4 is formed. First contact holes 5 are formed on the surface of the film 4. An amorphous Si (a-Si) film 14 is formed on the film 4 as a semiconductor film, and the glass substrate having the film 14 is annealed in a N atmosphere to crystallize the film 14 while a catalyst element in the film 3 is introduced in the film 14 through the contact holes 5.
Inventors:
Tsukasa Shibuya
Application Number:
JP4441096A
Publication Date:
August 13, 2001
Filing Date:
March 01, 1996
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/20; H01L21/02; H01L21/336; H01L27/12; H01L29/786; (IPC1-7): H01L21/20; H01L21/336; H01L27/12; H01L29/786
Domestic Patent References:
| JP7302912A |
Attorney, Agent or Firm:
Kazuhide Okada