Title:
スパッタリング・ターゲット、スパッタ・リアクタ、鋳込成形インゴットを調製する方法および金属物品を調製する方法
Document Type and Number:
Japanese Patent JP2004535933
Kind Code:
A
Abstract:
The invention encompasses a method of forming a metallic article. An ingot of metallic material is provided, and such ingot has an initial thickness. The ingot is subjected to hot forging. The product of the hot forging is quenched to fix an average grain size of less than 250 microns within the metallic material. The quenched material can be formed into a three dimensional physical vapor deposition target. The invention also includes a method of forming a cast ingot. In particular aspects, the cast ingot is a high-purity copper material. The invention also includes physical vapor deposition targets, and magnetron plasma sputter reactor assemblies.
Inventors:
Woo Ji Se
Lee, Uwen
Hidden, Frederick Bee
Lee, Uwen
Hidden, Frederick Bee
Application Number:
JP2003514968A
Publication Date:
December 02, 2004
Filing Date:
October 09, 2001
Export Citation:
Assignee:
Honeywell International Inc.
International Classes:
B22D21/00; B21J5/00; B21J5/02; B21J13/02; B21K21/00; B21K23/00; B22D7/00; B22D27/08; C22F1/00; C22F1/08; C23C14/34; C23C14/35; H01J37/34; (IPC1-7): B21J5/02; B21J5/00; B21J13/02; B21K23/00; B22D21/00; B22D27/08; C22F1/08; C23C14/34; C23C14/35
Attorney, Agent or Firm:
Kazuo Shamoto
Tadashi Masui
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Shinya Hosokawa
Tadashi Masui
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Shinya Hosokawa