Title:
加工対象物切断方法
Document Type and Number:
Japanese Patent JP5537081
Kind Code:
B2
Abstract:
A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.
Inventors:
Hideki Shimoi
Naomi Uchiyama
Daisuke Kawaguchi
Naomi Uchiyama
Daisuke Kawaguchi
Application Number:
JP2009175836A
Publication Date:
July 02, 2014
Filing Date:
July 28, 2009
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
B28D5/00; B23K26/38; B23K26/40; H01L21/301
Domestic Patent References:
| JP2007118207A | ||||
| JP2009023215A |
Foreign References:
| WO2005098916A1 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Satoru Ishida
Kenichi Shibayama
Shiro Terasaki
Satoru Ishida
Kenichi Shibayama