Title:
How to determine interstitial oxygen concentration
Document Type and Number:
Japanese Patent JP6013449
Kind Code:
B2
Abstract:
A method for determining the interstitial oxygen concentration of a sample made from a p-doped semiconductor material includes a step of heat treatment of the sample in order to form thermal donors, determining the duration of the heat treatment required to obtain a compensated semiconductor material, determining the thermal donors concentration in the sample of compensated semiconductor material, from the charge carriers concentration, and determining the oxygen concentration from the thermal donors of and the duration of the heat treatment.
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Inventors:
Jordi, Bellman
Sebastian, Dubois
Nicholas, Anjarveil
Sebastian, Dubois
Nicholas, Anjarveil
Application Number:
JP2014504369A
Publication Date:
October 25, 2016
Filing Date:
April 13, 2012
Export Citation:
Assignee:
Comisaria Allenergy Atomic Eo Energy Alternative
International Classes:
H01L21/324; C30B29/06; H01L21/66
Domestic Patent References:
| JP56009300A | ||||
| JP2163646A | ||||
| JP2008545605A | ||||
| JP63090141A | ||||
| JP2013536942A |
Other References:
SIMOEN E.,CHARACTERIZATION OF OXYGEN AND OXYGEN-RELATED DEFECTS IN HIGHLY- AND LOWLY-DOPED SILICON,MATERIALS SCIENCE AND ENGINEERING B,スイス,ELSEVIER SEQUOIA,2003年 9月15日,V102 N1-3,P207-212
ULYASHIN A. G.,CHARACTERIZATION OF OXYGEN DISTRIBUTION IN CZOCHRALSKI SILICON 以下省略,MATERIALS SCIENCE AND ENGINEERING B,スイス,ELSEVIER SEQUOIA,2000年 4月 1日,V73 N1-3,P124-129
ULYASHIN A. G.,CHARACTERIZATION OF OXYGEN DISTRIBUTION IN CZOCHRALSKI SILICON 以下省略,MATERIALS SCIENCE AND ENGINEERING B,スイス,ELSEVIER SEQUOIA,2000年 4月 1日,V73 N1-3,P124-129
Attorney, Agent or Firm:
Hirohito Katsunuma
Yukitaka Nakamura
Noritaka Yokota
Hakoda Mitsuru
Yukitaka Nakamura
Noritaka Yokota
Hakoda Mitsuru
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