Title:
フィーチャをエッチングする方法、および装置
Document Type and Number:
Japanese Patent JP5444277
Kind Code:
B2
Abstract:
A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.
Inventors:
Ruth Camellia
Dindosa Razinder
Hudson Eric A.
Srinivasan Mukundo
Lee Lumin
Kozakevich Felix
Dindosa Razinder
Hudson Eric A.
Srinivasan Mukundo
Lee Lumin
Kozakevich Felix
Application Number:
JP2011065376A
Publication Date:
March 19, 2014
Filing Date:
March 24, 2011
Export Citation:
Assignee:
LAM RESEARCH CORPORATION
International Classes:
H01L21/3065; B23B3/10; H01J37/32; H01L21/311; H01L21/467; H05H1/46
Domestic Patent References:
| JP10012597A | ||||
| JP2001110784A |
Attorney, Agent or Firm:
Meisei International Patent Office