Title:
How to form a broad trench using sacrifice slab
Document Type and Number:
Japanese Patent JP6282227
Kind Code:
B2
Abstract:
A method of forming an encapsulated wide trench includes providing a silicon on oxide insulator (SOI) wafer, defining a first side of a first sacrificial silicon slab by etching a first trench in a silicon layer of the SOI wafer, defining a second side of the first sacrificial silicon slab by etching a second trench in the silicon layer, forming a first sacrificial oxide portion in the first trench, forming a second sacrificial oxide portion in the second trench, forming a polysilicon layer above the first sacrificial oxide portion and the second sacrificial oxide portion, and etching the first sacrificial oxide portion and the second sacrificial oxide portion.
Inventors:
Gary O'Brien
Application Number:
JP2014541313A
Publication Date:
February 21, 2018
Filing Date:
November 09, 2012
Export Citation:
Assignee:
ROBERT BOSCH GMBH
International Classes:
B81C1/00; H03H3/007; H03H9/24
Foreign References:
| US20080290490 | ||||
| US20040245586 |
Attorney, Agent or Firm:
Shinjiro Ono
Yasushi Kobayashi
Shigeo Takeuchi
Osamu Yamamoto
Makoto Watanabe
Yasushi Kobayashi
Shigeo Takeuchi
Osamu Yamamoto
Makoto Watanabe
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