Title:
How to generate hydrogen from silicon system nano powder
Document Type and Number:
Japanese Patent JP6117118
Kind Code:
B2
Abstract:
A process for manufacturing silicon-based nanoparticles by electrochemical etching of a substrate, wherein the substrate is a metallurgical-grade or upgraded metallurgical-grade silicon, the substrate including an impurity content greater than 0.01%.
Inventors:
Borodimir, Luisenko
Jed, Client
Mahdi, Mejawi
Jed, Client
Mahdi, Mejawi
Application Number:
JP2013557113A
Publication Date:
April 19, 2017
Filing Date:
March 09, 2012
Export Citation:
Assignee:
INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON
Centre National De La Recherche Scientifique (C.N.R.S)
Centre National De La Recherche Scientifique (C.N.R.S)
International Classes:
C01B33/02; C01B33/021; C25B3/13
Domestic Patent References:
| JP2009502157A | ||||
| JP2008019113A | ||||
| JP2010533198A | ||||
| JP2005285380A | ||||
| JP2003515459A | ||||
| JP2009500272A | ||||
| JP5170421A | ||||
| JP2007500323A | ||||
| JP2004115349A |
Foreign References:
| WO1997006550A1 |
Other References:
D. N. GORYACHEV et al.,Formation of Thick Porous Silicon Layers with Insufficient Minority Carrier Concentration,Semiconductors,2004年,38,712-716.
Attorney, Agent or Firm:
Yukitaka Nakamura
Hirohito Katsunuma
Noritaka Yokota
Hirohito Katsunuma
Noritaka Yokota
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