Title:
How to grind using the polish combination thing which can be adjusted
Document Type and Number:
Japanese Patent JP6021584
Kind Code:
B2
Abstract:
A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon nitride is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon to silicon nitride removal rate selectivity; and wherein a second dilution of the concentrate used to polish the substrate is tuned to exhibit a second polysilicon removal rate and a second polysilicon to silicon nitride removal rate selectivity.
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Inventors:
Lee Guo
Kanchara-Arun Kumar Lady
Kanchara-Arun Kumar Lady
Application Number:
JP2012235708A
Publication Date:
November 09, 2016
Filing Date:
October 25, 2012
Export Citation:
Assignee:
Rohm and Haas Electronic Materials CMP Housings, Inc.
International Classes:
H01L21/304; B24B37/00; C09K3/14
Domestic Patent References:
JP2010267960A | ||||
JP2010067681A | ||||
JP2006120749A | ||||
JP2005072238A | ||||
JP2007103515A | ||||
JP2011216582A |
Foreign References:
US20080119051 |
Attorney, Agent or Firm:
Patent business corporation Tsukuni
Hajime Tsukuni
Yasuo Yanagibashi
Keiko Ozawa
Toshio Miyake
Yasuhiro Oguni
Yoko Tanaka
Yoshinori Ikukawa
Akio Shibata
Hajime Tsukuni
Yasuo Yanagibashi
Keiko Ozawa
Toshio Miyake
Yasuhiro Oguni
Yoko Tanaka
Yoshinori Ikukawa
Akio Shibata