Title:
犠牲材を使用してダマシンダイオードを作る方法
Document Type and Number:
Japanese Patent JP2012533885
Kind Code:
A
Abstract:
A method of making a semiconductor device includes forming a first layer comprising a seed material over an underlying layer, forming a second layer comprising a sacrificial material over the first layer, the sacrificial material being different from the seed material, patterning the first layer and the second layer into a plurality of separate features, forming an insulating filling material between the plurality of the separate features, removing the sacrificial material from the separate features to form a plurality of openings in the insulating filling material such that the seed material is exposed in the plurality of openings, and growing a semiconductor material on the exposed seed material in the plurality of openings.
Inventors:
Macara, rugby
Dunton, Vance
Yoichiro Tanaka
Maxwell, Stephen
Chang, Tong
Radigan, Stephen Jay.
Dunton, Vance
Yoichiro Tanaka
Maxwell, Stephen
Chang, Tong
Radigan, Stephen Jay.
Application Number:
JP2012520722A
Publication Date:
December 27, 2012
Filing Date:
July 13, 2010
Export Citation:
Assignee:
SanDisk Three Day, LRC
International Classes:
H01L27/105; H01L27/10; H01L27/28; H01L29/861; H01L29/868; H01L45/00; H01L49/00; H01L51/05
Attorney, Agent or Firm:
Toshi Inoguchi