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Patent Searching and Data


Title:
膜パターンの作製方法
Document Type and Number:
Japanese Patent JP5292224
Kind Code:
B2
Abstract:
The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.

Inventors:
Shinji Maekawa
Genki Fujii
Yuko Yamamoto
Masafumi Morisue
Application Number:
JP2009193830A
Publication Date:
September 18, 2013
Filing Date:
August 25, 2009
Export Citation:
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Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/469; H01L29/786; B05D1/12; B05D1/26; G02B5/20; G03F7/00; G09F9/30; H01L21/02; H01L21/28; H01L21/288; H01L21/3213; H01L21/336; H01L21/768; H01L29/423; H01L29/49
Domestic Patent References:
JP10283847A
JP2003332552A
JP2002289859A
JP2005334864A
JP2004006700A
JP6182980A
JP2001339072A
JP2003309265A
JP2004241769A
JP200593974A