Title:
蓄電装置の作製方法
Document Type and Number:
Japanese Patent JP6522925
Kind Code:
B2
Abstract:
A power storage device having high capacitance is provided. A power storage device with excellent cycle characteristics is provided. A power storage device with high charge and discharge efficiency is provided. A power storage device including a negative electrode with low resistance is provided. A negative electrode for the power storage device includes a current collector and an active material layer including a plurality of active material particles over the current collector. The active material particle is silicon, and the size of the silicon particle is greater than or equal to 0.001 μm and less than or equal to 7 μm.
Inventors:
Kiyofumi Ogino
Yumiko Yoneda
Rika Yatabe
Nobuhiro Inoue
Yumiko Yoneda
Rika Yatabe
Nobuhiro Inoue
Application Number:
JP2014228752A
Publication Date:
May 29, 2019
Filing Date:
November 11, 2014
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01M10/0568; H01G11/06; H01G11/30; H01G11/36; H01M4/134; H01M4/1395; H01M4/38; H01M4/62; H01M10/052
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Foreign References:
| WO2003036751A1 | ||||
| WO2012056765A1 | ||||
| US20120064409 |