Title:
スパッタリング用ターゲットの作製方法
Document Type and Number:
Japanese Patent JP6608848
Kind Code:
B2
Abstract:
A sputtering target including an oxide with a low impurity concentration is provided. Provided is a method for manufacturing a sputtering target, including a first step of preparing a mixture including indium, zinc, an element M (the element M is aluminum, gallium, yttrium, or tin), and oxygen; a second step of raising a temperature of the mixture from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of higher than or equal to 90 vol % and lower than or equal to 100 vol %; and a third step of lowering the temperature of the mixture from the second temperature to a third temperature in a second atmosphere containing oxygen at a concentration of higher than or equal to 10 vol % and lower than or equal to 100 vol %.
Inventors:
Shunpei Yamazaki
Yoshinori Yamada
Masashi Ota
Yoshinori Yamada
Masashi Ota
Application Number:
JP2016565588A
Publication Date:
November 20, 2019
Filing Date:
December 16, 2015
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
C04B35/01; C23C14/34; H01L21/363
Domestic Patent References:
| JP2014051735A | ||||
| JP2013144841A | ||||
| JP2012197219A | ||||
| JP2011129895A |