Title:
トランジスタの作製方法
Document Type and Number:
Japanese Patent JP4817535
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a light emitting device of low cost wherein improvement of yield of manufacturing processes and shortening a manufacturing term are realized by reducing photolithography processes concerning the manufacturing a transistor, and to provide an electric apparatus using the light emitting device. SOLUTION: A gate electrode 115 which is arranged above a semiconductor film 101 formed on insulator 100 is formed of conducting films 110, 114 constituted of plural layers. By using difference (selectivity at the time of etching) of the respective etching rates of the plural layers, the impurity concentration of impurity regions (especially, LDD regions 111, 112) formed in the semiconductor film 101 is controlled.
Inventors:
Shunpei Yamazaki
Hideomi Suzawa
Yukiharu Ono
Toru Takayama
Hideomi Suzawa
Yukiharu Ono
Toru Takayama
Application Number:
JP2001169074A
Publication Date:
November 16, 2011
Filing Date:
June 05, 2001
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/28; H01L21/336; G09F9/30; H01L21/8234; H01L21/8238; H01L27/08; H01L27/088; H01L27/092; H01L27/32; H01L29/423; H01L29/43; H01L29/49; H01L29/786
Domestic Patent References:
| JP8274336A | ||||
| JP7202210A | ||||
| JP7235680A | ||||
| JP9055508A | ||||
| JP2000047263A | ||||
| JP6333948A |