Title:
平坦基板にセレン、硫黄元素処理で半導体層と被覆基板を製造する方法
Document Type and Number:
Japanese Patent JP2012510713
Kind Code:
A
Abstract:
A processing device for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur includes an evacuable processing chamber for receiving a substrate to be processed. The substrate has a metal layer and/or a layer containing metal. A heating device provides convective heating of the substrate to a predetermined temperature. A first source of elementary selenium and/or sulphur vapor is located outside the processing chamber and connected to the processing chamber via a first feed line and/or a second source of elementary selenium and/or sulphur vapor is located inside the processing chamber. The elementary selenium and/or sulphur vapor is guided past the metal layer and/or layer containing metal, chemically reacting said layer with selenium or sulphur in a targeted manner. The substrate is heated and the elementary selenium and/or sulphur vapor is mixed and guided past the substrate by forced convection of a gas conveying device.
Inventors:
Probst, Volker
Application Number:
JP2011537897A
Publication Date:
May 10, 2012
Filing Date:
November 30, 2009
Export Citation:
Assignee:
Probst, Volker
International Classes:
H01L21/365; F27B5/04; F27B5/16; H01L31/04
Domestic Patent References:
| JP2006186114A | 2006-07-13 | |||
| JPS61263286A | 1986-11-21 | |||
| JPH10154661A | 1998-06-09 | |||
| JP2004296749A | 2004-10-21 | |||
| JP2002368241A | 2002-12-20 |
Foreign References:
| WO2008085604A2 | 2008-07-17 |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Katsuichi Nishimoto
Kato Kazunori
Katsuichi Nishimoto