Title:
ボロン濃度上昇に起因する不要な絶縁体エッチングを低減する方法
Document Type and Number:
Japanese Patent JP4733261
Kind Code:
B2
Abstract:
A method is provided for reducing elevated boron concentrations (denoted as "boron spikes") in an insulating layer containing silicon, boron and other elements where the layer interfaces with surfaces of a semiconductor device. The method includes the steps of: seasoning a reaction chamber by flowing into it a mixture of gasses containing silicon, boron, ozone and other elements in predetermined proportions under set conditions of time, pressure, temperature and flow rates to deposit on inner walls and surfaces of the chamber a thin seasoning coating, and placing a semiconductor device in the chamber and covering it with an insulating layer having a composition similar to the seasoning coating. Subsequent etching of selected portions of the insulating layer has been found not to expose conductive surfaces of the device.
Inventors:
Lee-Chun Kia
Francima Campana
Elie Ye
Francima Campana
Elie Ye
Application Number:
JP2000379713A
Publication Date:
July 27, 2011
Filing Date:
December 14, 2000
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/316; H01L21/311; H01L21/3105
Domestic Patent References:
| JP7169700A | ||||
| JP10064896A | ||||
| JP2240267A | ||||
| JP5259083A | ||||
| JP4505035A |
Attorney, Agent or Firm:
Sonoda Yoshitaka
Kobayashi Yoshinori
Kobayashi Yoshinori