PURPOSE: To reduce cost by forming a metallic thin film wiring layer from the laminated films of a copper thin-film wiring layer, a metallic thin-film barrier layer and an aluminum thin-film wiring layer.

CONSTITUTION: A metallic thin-film adhesive layer 21 such as a Cr film is shaped onto an insulating layer 9, and a copper thin-film wiring layer 22, a metallic thin-film barrier layer 23 and an Al thin-film wiring layer 24 are formed successively onto the layer 21 through a continuous sputtering method, etc. The exposed section of the layer 22 and the electrode terminal of a chip part 3 are bonded and connected by a conductive adhesive material layer 5, and the bonding pads 24 of the layer 24 and the electrode terminal sections of an IC bare chip 4 and the pads 24 of the layer 24 and terminals 6 in a lead frame are connected through wire bonding. Accordingly, the wiring layers can be formed without completely using Au, thus reducing cost.