Title:
IB-IIIA-VIA族化合物半導体ベースの薄膜太陽電池素子およびその製造方法
Document Type and Number:
Japanese Patent JP4873771
Kind Code:
B2
Abstract:
A thin film solar cell, with a back face electrode (4) of an intermetallic phase of the same group Ib and IIIa metals as tho used to form the absorber layer (5), is new. A Ib/IIIa/VIa compound semiconductor thin film solar cell has, between a p-type polycrystalline Ib/IIIa/VIa absorber layer and a substrate foil (1), a back face electrode (4) of an intermetallic phase of the same Ib and IIIa metals as those deposited form the absorber layer (5). An Independent claim is also included for production of the above thin film solar cell.
Inventors:
Olaf Tober
Jürgen Pendorf
Michael winkler
Claus Jacob
Thomas coshack
Jürgen Pendorf
Michael winkler
Claus Jacob
Thomas coshack
Application Number:
JP2000137642A
Publication Date:
February 08, 2012
Filing Date:
May 10, 2000
Export Citation:
Assignee:
ODERSUN AG
International Classes:
H01L31/04; H01L31/0224; H01L31/0264; H01L31/0272; H01L31/032; H01L31/0336; H01L31/0749; H01L31/18; H01L31/0392
Domestic Patent References:
| JP8107226A | ||||
| JP4304681A | ||||
| JP7097213A | ||||
| JP3239375A |
Attorney, Agent or Firm:
Furuya Fumio
Toshihide Mori
Toshihide Mori