Title:
IC device which has electro migration tolerance feed line structure
Document Type and Number:
Japanese Patent JP6053690
Kind Code:
B2
Abstract:
An integrated circuit (IC) device includes an electromigration resistant feed line. The IC device includes a substrate including active circuitry. A back end of the line (BEOL) metallization stack includes an interconnect metal layer that is coupled to a bond pad by the EM resistant feed line. A bonding feature is on the bond pad. The feed line includes a uniform portion and patterned trace portion that extends to the bond pad which includes at least three sub-traces that are electrically in parallel. The sub-traces are sized so that a number of squares associated with each of the sub-traces are within a range of a mean number of squares for the sub-traces plus or minus twenty percent or a current density provided to the bonding feature through each sub-trace is within a range of a mean current density provided to the bonding feature plus or minus twenty percent.
More Like This:
Inventors:
Gregory E Howard
Patrick Thompson
Patrick Thompson
Application Number:
JP2013544804A
Publication Date:
December 27, 2016
Filing Date:
December 16, 2011
Export Citation:
Assignee:
Texas Instruments Japan Ltd.
Texas Instruments Incorporated
Texas Instruments Incorporated
International Classes:
H01L21/3205; H01L21/60; H01L21/768; H01L21/822; H01L23/522; H01L27/04
Domestic Patent References:
| JP2007013063A | ||||
| JP2010251754A |
Foreign References:
| US20080026560 |
Attorney, Agent or Firm:
Kyozo Katayose
Previous Patent: An automobile electricity system provided with an alt. Neta electronic control system
Next Patent: JPS6053691
Next Patent: JPS6053691