Title:
ETCHING METHOD FOR DIAMOND
Document Type and Number:
Japanese Patent JPH0649668
Kind Code:
A
Abstract:
PURPOSE: To provide the etching method for diamond which is simple in handling.
CONSTITUTION: A diamond substrate synthesized under a high pressure to 2mm×1.5mm×0.3mm is used as a sample 120 and is set on an electrode 130. The gaseous pressure in a chamber 150 is discharged down to 10-3Torr and gaseous nitrogen is introduced therein to maintain the pressure under 2Torr. A discharge is generated between the electrode 130a and the electrode 130b by impressing a high frequency of 13.56MHz and 100W therebetween, by which the sample 120 is plasma etched.
Inventors:
TOMIKAWA TADASHI
SHIKADA SHINICHI
SHIKADA SHINICHI
Application Number:
JP20527092A
Publication Date:
February 22, 1994
Filing Date:
July 31, 1992
Export Citation:
Assignee:
CHIKYU KANKYO SANGYO GIJUTSU
SUMITOMO ELECTRIC INDUSTRIES
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C23F4/00; H01L21/302; H01L21/3065; (IPC1-7): C23F4/00; H01L21/302
Attorney, Agent or Firm:
Yoshiki Hasegawa (3 outside)
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