METHOD AND DEVICE FOR FORMING FILM BY USING ORGANIC SILICON SOURCE AND PRODUCTION OF SEMICONDUCTOR DEVICE

Title:

METHOD AND DEVICE FOR FORMING FILM BY USING ORGANIC SILICON SOURCE AND PRODUCTION OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH0831817

Kind Code:

A

Abstract:

PURPOSE: To improve the quality of an obtained silicon oxide film and realize excellent film formation even when a silicon oxide film is further formed on the silicon oxide film through a TEOS-O3 process, for example, while an increase of the number of processing steps and addition/introduction of new facilities are suppressed.

CONSTITUTION: When a silicon oxide film is formed on a substrate 1 through a reaction of an organic silicon source and oxidizing agent, the silicon oxide film is formed within a chamber 10 where a high-frequency voltage is applied, and after stopping the application of high-frequency voltage, a gas containing an organic gas containing silicon is introduced into the chamber 10 successively, or a gas containing an alcohol is introduced thereinto.

Inventors:

SAITO MASAKI

Application Number:

JP16090094A

Publication Date:

February 02, 1996

Filing Date:

July 13, 1994

Export Citation:

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Assignee:

SONY CORP

International Classes:

H01L21/31; H01L21/316; (IPC1-7): H01L21/316; H01L21/31

Attorney, Agent or Firm:

Toru Takatsuki

Next Patent: FORMATION OF INSULATION THIN FILM