Title:
【発明の名称】ビーム発生方法及び装置
Document Type and Number:
Japanese Patent JP2876280
Kind Code:
B2
Abstract:
PURPOSE:To change the electron density of a plasma beam, and to control the discharging voltage by giving the bias potential to an electrode, which contacts with the plasma beam closed by the magnetic filed generated by a magnetic field generating means. CONSTITUTION:A permanent magnet 24 is supported on a fitting bracket 25 fixed to the bottom of a chamber 11 so that the plasma beam 18 passes through the its center. Since this magnet 24 forms the magnetic field grade, which is to be quickly changed, along the orbit of the beam 18 to hinder the flow of electron, the beam 18 is left this part under the semi-closed condition. Electron density of the beam 18 under the semi-closed condition is larger than the density of ion due to the thermal diffusion to step up the discharging voltage. A discharging voltage control electrode 26 is arranged at a position, which contacts with the beam 18, and voltage is supplied from a bias power source 27. When the bias voltage is changed, electron density of the beam 18 is changed to change the discharging voltage. Discharging voltage is thereby controlled by changing the bias voltage.
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Inventors:
TANAKA MASARU
Application Number:
JP33356293A
Publication Date:
March 31, 1999
Filing Date:
December 27, 1993
Export Citation:
Assignee:
SUMITOMO JUKIKAI KOGYO KK
International Classes:
H05H1/24; H05H1/10; H05H1/11; H05H1/14; H05H1/54; (IPC1-7): H05H1/10; H05H1/11; H05H1/14; H05H1/54
Domestic Patent References:
| JP4220999A | ||||
| JP423400B2 |
Attorney, Agent or Firm:
Yosuke Goto (1 person outside)