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Patent Searching and Data


Title:
PHASE SHIFT EXPOSURE MASK
Document Type and Number:
Japanese Patent JPH0683024
Kind Code:
A
Abstract:

PURPOSE: To provide such a phase shift exposure mask that influences of defects such as residue on the substrate and small ruggedness of the surface of the phase shift part (shifter) which shifts the phase of transmitted light can be decreased and that a large defect can be repaired by using FIB or the like.

CONSTITUTION: This phase shift exposure mask has a phase shift part 11 to shift the phase of transmitted light in a part of the light-transmitting part. A film 2 which is optically transparent for the exposure light is formed in a flat state on at least the light-transmitting part required to transfer the pattern and that the difference of refractive index between the phase shift part and the exposure environment is ≤0.45.


Inventors:
SHIMIZU HIDEO
Application Number:
JP21147691A
Publication Date:
March 25, 1994
Filing Date:
July 29, 1991
Export Citation:
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Assignee:
SONY CORP
International Classes:
G03F1/29; G03F1/30; G03F1/68; G03F1/80; H01L21/027; (IPC1-7): G03F1/08; H01L21/027
Attorney, Agent or Firm:
Toru Takatsuki