PURPOSE: To materialize a gate electrode stable in structure, high in heat resistance, and high in reliability when forming a HEMT of gate electrode on a GaAs substrate.
CONSTITUTION: An insulating layer 16 is accumulated after recess etching when forming a HEMT of gate electrode, a resist pattern 17 is formed hereon to form an opening 18 in the insulating layer, and a first metallic wiring layer 19a is accumulated all over the surface after removal of the first resist pattern. Furthermore, a second resist pattern 20 is made hereon, and a second resist pattern and a second metallic wiring layer are lifted off after accumulation of the second metallic wiring layer all over the surface, furthermore the exposed section of the first metallic wiring layer is etched off by a selective dry etching method.
SHIMADA CHO
AKIYAMA TATSUO
KAMURA MAYUMI
