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Title:
METHOD AND DEVICE OF FORMING ELECTRODE
Document Type and Number:
Japanese Patent JPH0714805
Kind Code:
A
Abstract:

PURPOSE: To form electrode by heat treatment at lower temperature than before.

CONSTITUTION: An n-type ZnSe substrate cleaned by an organic solution is fitted to a substrate holder 2b in a vacuum vessel 1b at vacuum degree of about 1×10-8Torr. Next, the water and organic matter are removed from the surface of the substrate by pre-heating the holder with the substrate at 200°C for 15 minutes by a heater. Simultaneously, a mask 3b is burned at 1000°C for one hour for degassing. Next, the burned mask 3b is shifted to the substrate surface sustaining the substrate temperature at 200°C (3a). Finally, while focussing the beams 4c of a halogen lamp (iodine tungsten lamp 60w) 4b on the substrate surface for irradiation, the surface is to be irradiated with molecular beams 5c at the pressure of 1×10-6Torr for one hour.


Inventors:
HAYASHI SHIGEO
OKAWA KAZUHIRO
MITSUYU TSUNEO
Application Number:
JP15168793A
Publication Date:
January 17, 1995
Filing Date:
June 23, 1993
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
C23C14/24; H01L21/203; H01L21/285; (IPC1-7): H01L21/285; C23C14/24
Attorney, Agent or Firm:
Hiroyuki Ikeuchi (1 person outside)



 
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