Title:
【発明の名称】低ドリフト抵抗体を有する集積回路
Document Type and Number:
Japanese Patent JP2645779
Kind Code:
B2
Abstract:
A low drift integrated circuit resistor structure has a forced high end and a forced low end. A sense high connection is located proximate to the force high connection, and a sense low connection is located proximate to the force low connection. The structure also has at least one internal sense connection. This structure can be used in an instrumentation amplifier that includes an operational amplifier which regulates the current between the force high connection and the force low connection in response, in part, to the current sensed in the internal sensing connection of the resistor structure. The sense high connection and the sense low connection form the outputs of the instrumentation amplifier.
More Like This:
Inventors:
DONARUDO ARAN KAASU
Application Number:
JP26560992A
Publication Date:
August 25, 1997
Filing Date:
September 09, 1992
Export Citation:
Assignee:
KURISUTARU SEMIKONDAKUTAA CORP
International Classes:
H01L27/04; H01C7/22; H01L21/02; H01L21/822; H01L27/06; (IPC1-7): H01L27/04; H01L21/822
Domestic Patent References:
| JP2292854A | ||||
| JP62196908A | ||||
| JP63227043A | ||||
| JP6425556A | ||||
| JP62303586U |
Attorney, Agent or Firm:
Koichiro Kato (2 outside)