Title:
【発明の名称】許容値が改善され処理が簡略化された集積薄膜金属抵抗
Document Type and Number:
Japanese Patent JP2002520809
Kind Code:
A
Abstract:
A method for manufacturing a microelectronic assembly to have a resistor, and particularly a metal resistive film, with desirable processing and dimensional characteristics. The method generally entails applying a photosensitive dielectric to a substrate to form a dielectric layer. The dielectric layer is photoimaged to polymerize a first portion of the dielectric layer on a first region of the substrate, leaving the remainder of the dielectric layer unpolymerized. An electrically resistive film is then applied to the dielectric layer, and the dielectric layer is developed to remove concurrently the unpolymerized portion thereof and the portion of the resistive film overlying the unpolymerized portion, so that a portion of the resistive film remains over the second portion to form the resistor. An alternative process order is to apply the resistive film prior to exposing the dielectric layer to radiation, and then exposing the dielectric layer through the resistive film. The resistive film is preferably a multilayer film that includes an electrically resistive layer, such as NiP, NiCr or another nickel-containing alloy, and a sacrificial backing such as a layer of copper.
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Inventors:
Gregory Jay Dunn
Hobika Subic
Allison Buehler
Hobika Subic
Allison Buehler
Application Number:
JP2000558425A
Publication Date:
July 09, 2002
Filing Date:
June 29, 1999
Export Citation:
Assignee:
MOTOROLA INCORPORATED
International Classes:
G03F7/00; H01C17/06; H01C17/07; H05K1/16; H05K3/06; H05K3/00; H05K3/02; H05K3/04; H05K3/38; (IPC1-7): H01C17/06; H05K1/16; H05K3/06
Attorney, Agent or Firm:
Shinsuke Onuki (2 outside)