Title:
【発明の名称】イオンビームの照射方法
Document Type and Number:
Japanese Patent JP2607765
Kind Code:
B2
Abstract:
PURPOSE:To attain uniform doping on a substrate of a large area by moving the substrate to repeatedly irradiate it with an ion beam uniformly while overlapping the ion beam by a bucket type ion source whose plane shape is formed into a polygon. CONSTITUTION:A plurality of permanent magnets 2 are arranged in each peripheral side of an ion generating chamber 1, whose plane shape is a quadrangle, so that mutually adjacent magnetic poles of each magnet are oppositely placed. Accordingly, a linecups magnetic field 3 is formed to form a quandrangular uniform ion distribuktion region 4. A doping chamber, ion drawing electrode and a substrate holdre are provided in an upper part of the chamber 1. By changing a dope region and also overlapping an ion beam while horizontally moving the holder by holding an ion-doping substrate to the substrate holder, uniform beam irradiation can be performed, and in the case of doping impurities, impurity concentration distribution can be uniformly provided.
Inventors:
Takashi Aoyama
Kenji Kawauchi
Suzuki Hoya
Kenji Kawauchi
Suzuki Hoya
Application Number:
JP7061091A
Publication Date:
May 07, 1997
Filing Date:
March 11, 1991
Export Citation:
Assignee:
GTC Inc.
International Classes:
C23C14/48; H01J37/08; H01J37/317; H01L21/265; (IPC1-7): H01J37/317; C23C14/48; H01J37/08; H01L21/265
Domestic Patent References:
| JP63228548A | ||||
| JP443632A | ||||
| JP2148547A | ||||
| JP2129650U | ||||
| JP231056U |
Attorney, Agent or Firm:
Masatake Shiga (2 outside)