Title:
【発明の名称】酸化物超電導体薄膜形成法
Document Type and Number:
Japanese Patent JP2759119
Kind Code:
B2
Abstract:
PURPOSE:To increase the efficiency of film formation of applying DC voltage on a stabilized zirconia substrate when noble metal films are adhered to both sides of the substrate and thin films of an oxide superconductor are formed on the surfaces of the noble metal films in an oxygen atmosphere under reduced pressure. CONSTITUTION:Films of a noble metal such as Pt are adhered to both sides of a stabilized zirconia substrate. This substrate is set in a sputtering device so that the noble metal films as anodes confront targets. The vapor growth device is evacuated while feeding oxygen into the device. When DC voltage is applied between electrodes, oxygen in a formed atmosphere is taken in by load. This oxygen penetrates the substrate in the thickness direction by ionic conduction and deposits on the surfaces of the anodes. At the same time, thin film of an oxide superconductor are formed on the surfaces of the anodes by vapor growth. The deposited oxygen permeates the thin films and reacts to supply the deficiency of oxygen during film formation. The amt. of oxygen in the resulting thin films can be made proper.
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Inventors:
KAMITO KOJI
KAJI GENTARO
NAGANO SABURO
KAJI GENTARO
NAGANO SABURO
Application Number:
JP3205389A
Publication Date:
May 28, 1998
Filing Date:
February 10, 1989
Export Citation:
Assignee:
KYOSERA KK
International Classes:
C04B41/90; C01G1/00; C23C14/06; C23C28/00; C30B29/22; H01B12/06; H01B13/00; H01L39/24; (IPC1-7): C30B29/22; C23C14/06; H01B13/00; H01L39/24
Domestic Patent References:
| JP1107423A | ||||
| JP1238178A |
Attorney, Agent or Firm:
Aoyama Ryo (1 person outside)