【発明の名称】準安定第15族合金の酸化物および窒化物および第15族元素の窒化物およびそれらから形成された半導体装置

Title:

【発明の名称】準安定第15族合金の酸化物および窒化物および第15族元素の窒化物およびそれらから形成された半導体装置

Document Type and Number:

Japanese Patent JPH06507274

Kind Code:

A

Abstract:

A process and resultant devices is described for forming MOSFET, CMOS and BICMOS devices of Group IV alloys, in particular SixGe1-x wherein 0

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Inventors:

Harbots, Nicole
Hermann, Olof See
Banco Weenberg, Olivier PJ

Application Number:

JP51190092A

Publication Date:

August 11, 1994

Filing Date:

April 22, 1992

Export Citation:

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Assignee:

Masachi Yusetsu Institute of Technology

International Classes:

H01L21/314; H01L21/331; H01L21/8249; H01L27/06; H01L29/10; H01L29/165; H01L29/73; H01L29/737; H01L29/78; (IPC1-7): H01L29/784; H01L21/314; H01L21/331; H01L27/06; H01L29/165; H01L29/73

Attorney, Agent or Firm:

Heiyoshi Odashima

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