Title:
【発明の名称】位相シフト・マスク矯正方法および位相シフト・マスク・システム
Document Type and Number:
Japanese Patent JP2886522
Kind Code:
B2
Abstract:
A method and apparatus for correcting defects in a phase shift mask to be used in photolithography. More specifically, the method of the invention includes creating a second repair mask which contains phase shifters. Regions surrounding the defects on the first mask are made opaque. The design circuitry located in these defective regions is copied onto the second mask. During a second exposure the design circuitry is placed onto the semiconductor wafer. Therefore, this method and apparatus provides an inexpensive solution to a difficult problem.
Inventors:
RARUSU DABURYUU RIIBUMAN
BAAN JEN RIN
MAAKU OO NEISAA
BAAN JEN RIN
MAAKU OO NEISAA
Application Number:
JP297498A
Publication Date:
April 26, 1999
Filing Date:
January 09, 1998
Export Citation:
Assignee:
INTAANASHONARU BIJINESU MASHIINZU CORP
International Classes:
G03F1/26; G03F1/72; H01L21/027; (IPC1-7): G03F1/08; H01L21/027
Domestic Patent References:
| JP6194823A |
Attorney, Agent or Firm:
Hiroshi Sakaguchi (1 person outside)