NON-VOLATILE SEMICONDUCTOR STORAGE

Title:

NON-VOLATILE SEMICONDUCTOR STORAGE

Document Type and Number:

Japanese Patent JPH0661498

Kind Code:

A

Abstract:

PURPOSE: To improve the reliability for the data retention (charge retention in a floating gate) of a non-volatile semiconductor storage with a floating gate electrode and an insulation film formed by a coating baking method.

CONSTITUTION: A floating gate electrode 9 and a control gate electrode 8 are formed and then a first interlayer insulation film 20 and a first metal wiring 12 are formed. After that, the film of a nitride film, for example, a silicon oxynitride film 118, is formed. Then, a second interlayer insulation film 13 is formed and then an SOG film 14 is formed. After that, the SOG film is etched back by dry etching and a third interlayer insulation film is formed. Then, a second metal wiring 3 and a cover film are formed, thus forming the nitride film between the floating gate electrode and the SOG film and hence preventing a charge in the floating gate electrode from being affected by water in the SOG film for improving the reliability.

Inventors:

GOTO YOSHIRO

Application Number:

JP20867792A

Publication Date:

March 04, 1994

Filing Date:

August 05, 1992

Export Citation:

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Assignee:

NEC CORP

International Classes:

H01L21/8247; H01L23/31; H01L23/532; H01L27/115; H01L29/788; H01L29/792; (IPC1-7): H01L29/788; H01L29/792

Attorney, Agent or Firm:

Naoki Kyomoto (2 outside)

Next Patent: MANUFACTURE OF NON-VOLATILE SEMICONDUCTOR STORAGE