PURPOSE: To prevent that the number of yielded chips is reduced, by a method wherein, before a close contact layer is formed, a silicon thin film is formed on the whole surface of a semiconductor wafer.

CONSTITUTION: An impurity-diffused layer 10a is formed on a silicon wafer 10, an interlayer insulating film 11 is deposited, a contact hole 12 is made. Then, a polysilicon film 13 is formed on the whole surface of the wafer by a CVD operation. Then, the peripheral edge part of the wafer is supported by a clamp 16, a Ti film 14 and a TiN film 15 are formed sequentially by a sputtering method. At this time, the Ti film is reacted with the polysilicon film 13 at the substratum and changed to a TiSi film 17. Then, the silicon wafer is moved to a blanket TiSi2 film-formation apparatus, a blanket tungsten film 18 is deposited up to a film thickness to fill the contact hole 12. Thereby, the blanket tungsten film 18 can be formed so as to be brought into contact satisfactorily on the polysilicon film 13 in a part supported by the clamp 16.