SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

Title:

SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

Document Type and Number:

Japanese Patent JPH0621098

Kind Code:

A

Abstract:

PURPOSE: To make it possible to form a thin film transistor having offset structure or LDD structure on a large board with simplicity by providing a source/ drain area on an offset portion produced by a gate electrode or on a side wall formed at the offset portion around the gate electrode.

CONSTITUTION: A source/drain area 105 is formed on an offset portion by a gate electrode 102 on a board 101 or on a side wall 104 formed at the offset portion around the gate electrode 102. In this case, the source/drain area 105 consists of a silicon film 105 selectively formed on the side wall 104 by diffusing impurities, such as P, A and B or the like from the side wall 104. This construction makes it possible to form a thin film transistor having offset structure or LDD structure on a large board by using a simple process.

Inventors:

MACHIDA YOSHIHIKO

Application Number:

JP17638992A

Publication Date:

January 28, 1994

Filing Date:

July 03, 1992

Export Citation:

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Assignee:

SEIKO EPSON CORP

International Classes:

H01L29/78; H01L21/336; H01L29/786; (IPC1-7): H01L21/336; H01L29/784

Attorney, Agent or Firm:

Kisaburo Suzuki (1 outside)

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