Title:
【発明の名称】多層結晶構造及びその製造方法
Document Type and Number:
Japanese Patent JP3373853
Kind Code:
B2
Abstract:
PCT No. PCT/PL94/00008 Sec. 371 Date Feb. 9, 1996 Sec. 102(e) Date Feb. 9, 1996 PCT Filed Apr. 27, 1994 PCT Pub. No. WO95/04845 PCT Pub. Date Feb. 16, 1995A process for fabricating a multilayer crystalline structure of nitrides of metals from group III of periodic table including GaN, AlN and InN is provided. The process includes the steps of heating a group III metal (26) to a temperature T1 under an equilibrium nitrogen pressure while maintaining group III metal nitride stability to form a first crystal layer of the group III metal nitride. Thereafter the method includes the step of forming a second crystal layer (28) of the group III metal nitride by decreasing the nitrogen pressure such that the second crystal layer grows on the first layer with a growth rate slower than the growth rate of the first layer at a temperature T2 not greater than temperature T1. The second layer (28) grows on at least a portion of the first layer at a predetermined thickness under the new nitrogen pressure.
Inventors:
Polowski, Sylvester
Yun, Yang
Gudjegoshi, Isabella
Krkowski, Stanislaw
Vlewrevski, Miloslaw
Yun, Yang
Gudjegoshi, Isabella
Krkowski, Stanislaw
Vlewrevski, Miloslaw
Application Number:
JP50636195A
Publication Date:
February 04, 2003
Filing Date:
April 27, 1994
Export Citation:
Assignee:
Centrum Badani Visokotshini Yeniov Polskiy Academia Nauk
International Classes:
C23C16/18; C30B11/00; C30B11/12; H01L21/20; H01L21/203; H01L21/205; H01L21/208; H01L33/00; C30B29/40; H01L33/32; H01S5/00; H01S5/323; (IPC1-7): H01L21/20; C23C16/18; C30B29/40; H01L21/203; H01L21/205; H01L21/208; H01L33/00; H01S5/323
Domestic Patent References:
| JP60173829A |
Attorney, Agent or Firm:
Yasuhiko Takeishi (1 outside)