ION ETCHING TREATMENT OF SUBSTRATE SURFACE AND THIN FILM FORMATION

Title:

ION ETCHING TREATMENT OF SUBSTRATE SURFACE AND THIN FILM FORMATION

Document Type and Number:

Japanese Patent JPH0729884

Kind Code:

A

Abstract:

PURPOSE: To obtain clean surfaces free from deposit by covering the surface of a cathode and/or an anode, exposed in a discharge space, with an electrode protective member of the same material as substrates.

CONSTITUTION: The cathode protective member 2 for a cathode 1, the anode protective member 4 for an anode and a cylindrical deposition preventive member 6 use the same material as a target member or a substrate 7 to be subjected to ion etching. All parts of the members need not be composed of the same material; only the surface of the members need be composed of the same material as a target member or a substrate 7 to be subjected to ion etching. This prevents substances sputtered from the surface of a target member or etched substrate from depositing on the electrodes or the inside wall of the vacuum vessel during an ion etching process.

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Inventors:

OGAWA HIROBUMI
SAMEJIMA KENJI
TSUJI KAZUTAKA
HIRAI TADAAKI

Application Number:

JP16772193A

Publication Date:

January 31, 1995

Filing Date:

July 07, 1993

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

C23C14/00; C23C14/34; C23F4/00; H01L21/203; H01L21/302; H01L21/3065; H01L21/31; (IPC1-7): H01L21/3065; C23C14/00; C23C14/34; C23F4/00; H01L21/203; H01L21/31

Attorney, Agent or Firm:

Ogawa Katsuo

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