Title:
【発明の名称】酸化物導電膜の成膜加工方法
Document Type and Number:
Japanese Patent JP3117446
Kind Code:
B2
Abstract:
A conductive oxide film (2) is formed on a substrate (1) at a low temperature. The formed conductive oxide film (2) is not very dense because of the low temperature. Therefore the formed conductive oxide film (2) can easily be etched by an etchant having a weak etching capability. And by the etching a pattern of the formed conductive oxide film (2) is produced. The patterned conductive oxide film is oxidized at a temperature in the range of 100-400 DEG C. In this way a conductive oxide pattern is produced in a shorter time in the method of the present invention than in a conventional method and the conductive oxide pattern produced by the method of the present invention has the almost same resistivity as the conductive oxide pattern produced by the conventional method and has an improved pattern edge and an improved reproducibility.
Inventors:
Takeshi Fukui
Naoya Sakamoto
Takeshi Fukada
Naoya Sakamoto
Takeshi Fukada
Application Number:
JP15291189A
Publication Date:
December 11, 2000
Filing Date:
June 15, 1989
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G02F1/1333; C23C14/04; C23C14/08; C23C14/58; G02F1/1343; H01B5/14; H01B13/00; H01L31/105; H01L31/18; H01L39/24; (IPC1-7): H01B5/14; C23C14/04; C23C14/08; C23C14/58; G02F1/1333; H01B13/00; H01L39/24
Domestic Patent References:
| JP6239821A | ||||
| JP63103060A | ||||
| JP63160336A | ||||
| JP63100777A | ||||
| JP6343322A | ||||
| JP6414928A | ||||
| JP6451656A | ||||
| JP6101254B2 |
Attorney, Agent or Firm:
Junyuki Watanabe