Title:
SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JPH07106687
Kind Code:
A
Abstract:
PURPOSE: To provide a semiconductor laser having a current block structure in which the high frequency characteristics are enhanced while reducing the capacitance.
CONSTITUTION: The semiconductor laser comprises an n-InGaAlP clad layer 12, an MQW active layer 14, a p-InGaAlO clad layer 16, a p-InGaAlP clad layer 18 formed in stripe, a current block layer 20 of p-n junction structure comprising a p-GaAs layer 201 having acceptor concentration of 5×1015cm-3 and an n-GaAs layer 202 having donor concentration of 4×1017cm-3, and a p--GaAs contact layer 21.
Inventors:
WATANABE MINORU
Application Number:
JP24288493A
Publication Date:
April 21, 1995
Filing Date:
September 29, 1993
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01S5/00; (IPC1-7): H01S3/18
Attorney, Agent or Firm:
Takehiko Suzue