PURPOSE: To improve mass-productivity by passing plural connected substrate holding parts under a soln. reservoir, taking out a product after growth is finished, cutting off the foremost part of the holding part, connecting the holding part to the rearmost part, housing a fresh substrate and again growing a crystal.

CONSTITUTION: A soln. and a part of raw material are introduced into the opening of a soln. reservoir, heated in an H2 gas current and purified, and the remaining raw material is introduced into the opening of another soln. reservoir. Substrates W1 and W2 are placed in the holes Z1 and Z2 of the substrate, the substrate holding part X is moved by pulling a drawing part Q to move the substrate W1 under the opening R12 and the substrate W2 under the opening R13, and the thin film of a first layer is grown. The substrate W1 and W2 are moved under the openings R12 and R13 by operating the drawing part Q to grow a second layer, and further the substrates W1 and W2 are moved under the opening R11 and R21 by moving a slider Y to grow a third layer. The substrates W1 and W2 are taken out after growth is finished, and then the substrate holding part X1 is detached from the drawing part Q and connected to the rear of the substrate holding part X2. A fresh substrate is placed in the substrate hole of the opening, and succeeding epitaxy is conducted.