PURPOSE: To increase the buckling load and stiffness of a needle single crystal by coating a side face of the needle single crystal formed by the VLS growth method with an electro-conductive layer and embedding it in an embedding material.

CONSTITUTION: A needle single crystal (A) of an element or a compound such as Si, LaB6 formed on an insulating base 1 such as Si single crystal by the VLS process (3 is a needle single crystal; 5 is alloy on the top end) is coated with a metal of high electroconductivity of 1 to 10μm thickness on its side face and, when needed, its top flat part by metallizing, plating or dipping to give an electroconductive single crystal (B) of 5 to 300μm diameter and 1 to 500 aspect ratio. The single crystal (B) is embedded with a thermosetting containing an inorganic filler or a thermoplastic resin or a glass softening at a low temperature in a thickness of 1-2mm, 300 to 500°C so that the positioning accuracy of the single crystal (B) is kept in the range of 0 to 10μm and the needle crystals project from the surface of the embedding material 7 by 10 to 500μm to give the objective needle single crystal composite (E).