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Title:
HIGH PURITY TITANIUM SPUTTERING TARGET
Document Type and Number:
Japanese Patent JPH0790560
Kind Code:
A
Abstract:

PURPOSE: To stably attain the uniformity of film thickness distribution by specifying the crystal structure, average crystal particle diameter and crystal orientation of a target to reduce the dispersion of the film thickness distribution between the targets and in the use of the same target.

CONSTITUTION: This target has essentially a recrystallized structure as the crystal structure of the target and has ≤500μm average crystal particle diameter in each part. The dispersion of the average crystal particle diameter in each part per the average crystal particle diameter in the whole target is ≤20%. Furthermore, the dispersion of the content ratio of crystal orientation calculated based on a specific formula defined by measuring the sputtering surface by X-ray diffraction method is controlled to ≤20.


Inventors:
SAWADA SUSUMU
FUKUYO HIDEAKI
NAGASAWA TAKASHI
Application Number:
JP26038093A
Publication Date:
April 04, 1995
Filing Date:
September 27, 1993
Export Citation:
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Assignee:
JAPAN ENERGY CORP
International Classes:
C23C14/34; (IPC1-7): C23C14/34
Domestic Patent References:
JPH05214521A1993-08-24
JPH05214520A1993-08-24
JPH04116161A1992-04-16
JPH0610107A1994-01-18
JPH0790561A1995-04-04
JPH0790562A1995-04-04
JPH0790563A1995-04-04
Attorney, Agent or Firm:
Motohiro Kurauchi (1 outside)