PURPOSE: To stably attain the uniformity of film thickness distribution by specifying the crystal structure, average crystal particle diameter and crystal orientation of a target to reduce the dispersion of the film thickness distribution between the targets and in the use of the same target.
CONSTITUTION: This target has essentially a recrystallized structure as the crystal structure of the target and has ≤500μm average crystal particle diameter in each part. The dispersion of the average crystal particle diameter in each part per the average crystal particle diameter in the whole target is ≤20%. Furthermore, the dispersion of the content ratio of crystal orientation calculated based on a specific formula defined by measuring the sputtering surface by X-ray diffraction method is controlled to ≤20.
FUKUYO HIDEAKI
NAGASAWA TAKASHI
JPH05214521A | 1993-08-24 | |||
JPH05214520A | 1993-08-24 | |||
JPH04116161A | 1992-04-16 | |||
JPH0610107A | 1994-01-18 | |||
JPH0790561A | 1995-04-04 | |||
JPH0790562A | 1995-04-04 | |||
JPH0790563A | 1995-04-04 |