Title:
【発明の名称】集積回路における垂直金属接続を製造する方法
Document Type and Number:
Japanese Patent JP2002536846
Kind Code:
A
Abstract:
At least one layer of a dielectric material 3 is deposited on a copper track 1 covered with an encapsulation layer 2. A cavity 6 is etched in the layer of dielectric material at the location of the future vertical connection. At least one protective layer is deposited in said cavity to preclude diffusion of copper 7. The protective layer 7 at the bottom of the cavity 6 is subjected to an anisotropic etching treatment and also the encapsulation layer 2 is subjected to etching, whereafter the cavity is filled with copper. The copper particles pulverized during etching the encapsulation layer do not contaminate the dielectric material 3.
Inventors:
Frommet Benoit
Guyet Filippe
Van der Wegt Erik
Guyet Filippe
Van der Wegt Erik
Application Number:
JP2000599076A
Publication Date:
October 29, 2002
Filing Date:
February 04, 2000
Export Citation:
Assignee:
Konin Krekka Philips Electronics NV
Estee Microelectronics SA
Estee Microelectronics SA
International Classes:
H01L21/28; H01L21/3205; H01L21/768; H01L23/52; H01L23/522; H01L23/532; (IPC1-7): H01L21/768; H01L21/28; H01L21/3205
Attorney, Agent or Firm:
Masao Sawada