Title:
IC STRUCTURE
Document Type and Number:
Japanese Patent JPS5466087
Kind Code:
A
Abstract:
A high sheet resistance structure for high density integrated circuits and the method for manufacturing such structure is given. The structure includes a silicon region separated from other silicon regions by a dielectric barrier surrounding the region. A resistor of a first conductivity, for example, N type, encompasses substantially the surface of the silicon region. Electrical contacts are made to the resistor. A region highly doped of a second conductivity, for example, P-type, is located below a portion of the resistor region. This region of second conductivity is connected to the surface. Electrical contacts are made to this varied region for biasing purposes. A second region within the same isolated silicon region may be used as a resistor. This region is located below the buried region of second conductivity. Alternatively, the described resistor regions can be connected as transistors. This allows the formation of a standard masterslice which can be personalized at a late stage in the manufacturing to either resistors or transistors in all or a portion of the standard regions.
Inventors:
NARASHIPAA GANDATSUPA ANANSA
OOGASUTEIN UEIICHIYUN CHIYANGU
OOGASUTEIN UEIICHIYUN CHIYANGU
Application Number:
JP11247078A
Publication Date:
May 28, 1979
Filing Date:
September 14, 1978
Export Citation:
Assignee:
IBM
International Classes:
H01L21/331; H01L27/04; H01L21/74; H01L21/762; H01L21/82; H01L21/822; H01L27/08; H01L27/118; H01L29/73; H01L29/8605; H01L29/861; (IPC1-7): H01L21/76
Domestic Patent References:
| JPS49131788A | 1974-12-17 | |||
| JPS49131789A | 1974-12-17 | |||
| JPS4869477A | 1973-09-20 | |||
| JPS514978A | 1976-01-16 | |||
| JPS5167080A | 1976-06-10 |