Title:
IGZO SINTERED BODY, SPUTTERING TARGET, AND OXIDE FILM
Document Type and Number:
Japanese Patent JP2014024738
Kind Code:
A
Abstract:
To provide: an IGZO (In-Ga-Zn-O) sintered body in which a density and a flexural strength are high, and a crack is few even when being used for a sputtering target; a production method of the same; and an oxide film that is excellent in permeability and mobility by using the sputtering target.
An oxide sintered body in which a density and a flexural strength are high can be prepared by adding at least 20 ppm and less than 100 ppm by a weight ratio of zirconium to a sintered body having a homologous crystal structure represented by InGaZnO4. Furthermore, the sintered body is used for a target material, thereby an oxide semiconductor film having favorable permeability and mobility can be prepared.
Inventors:
ONOMI KENJI
HARA SHINICHI
ITO KENICHI
SHIBUTAMI TETSUO
HARA SHINICHI
ITO KENICHI
SHIBUTAMI TETSUO
Application Number:
JP2012168553A
Publication Date:
February 06, 2014
Filing Date:
July 30, 2012
Export Citation:
Assignee:
TOSOH CORP
International Classes:
C04B35/00; C23C14/34; H01L21/363
Domestic Patent References:
| JP2011105563A | 2011-06-02 |
Foreign References:
| WO2009084537A1 | 2009-07-09 | |||
| WO2011040028A1 | 2011-04-07 | |||
| WO2009148154A1 | 2009-12-10 |
Other References:
大沢俊明ほか: "ＢａＮｄ２Ｔｉ５Ｏ１４コンデンサー原料のサブミクロン粉砕及びその焼結性", JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, vol. 103, no. 8, JPN6016014283, 1995, JP, pages 816 - 821, ISSN: 0003299725
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