Title:
II-VI FAMILY SYSTEM SEMICONDUCTOR LASER AND ITS PREPARATION
Document Type and Number:
Japanese Patent JPH07240561
Kind Code:
A
Abstract:
PURPOSE: To provide a II-VI (particularly, MgZnSSe, CdZnSSe, MgCdZnSSe) semiconductor laser having superior characteristics, low threshold voltage and low operating voltage, and a method for manufacturing it. CONSTITUTION: In the II-VI semiconductor laser constituted by sequentially crystal growing an adsorption layer containing a crystal constituting element and dopant in an n-type substrate, a layer from an initial adsorption layer to a layer immediately before a final p-type adsorption layer by a solid-source MBE method, and the final p-type adsorption layer is formed by a gas source MBE method or MOVPE method. In this case, the final p-type adsorption layer is preferably grown under II group element-rich condition.
Inventors:
YAMADA NORIHIDE
Application Number:
JP4976294A
Publication Date:
September 12, 1995
Filing Date:
February 23, 1994
Export Citation:
Assignee:
HEWLETT PACKARD CO
International Classes:
H01S5/327; H01S5/00; H01S5/347; (IPC1-7): H01S3/18
Attorney, Agent or Firm:
Hideo Ueno
Previous Patent: Balance data transmission method and balance system therefor
Next Patent: SEMICONDUCTOR LASER AND ITS MANUFACTURE
Next Patent: SEMICONDUCTOR LASER AND ITS MANUFACTURE