III-V COMPD. SEMICONDUCTOR, MANUFACTURE THEREOF AND SEMICONDUCTOR ELEMENT

Title:

III-V COMPD. SEMICONDUCTOR, MANUFACTURE THEREOF AND SEMICONDUCTOR ELEMENT

Document Type and Number:

Japanese Patent JPH11135770

Kind Code:

A

Abstract:

To provide a III-V compd. semiconductor with a thin film having an embedded structure, III-V compd. semiconductor, and III-V compd. semiconductor light-emitting element.

This III-V compd. semiconductor has a pattern 2 made of a material different from first and second III-V compd. semiconductors on a layer of the first III-V compd. semiconductor 1 shown by InuGavAlwN (0≤u, v, w≤1, u+v+w=1) and a layer 2 of the second III-V compd. semiconductor shown by InxGayAlzN (0≤x, y, z≤1, x+y+z=1) on the first III-V compd. semiconductor and the pattern 2 which is a line pattern of 1.0 μm wide or less, approximately parallel to the (1-100) orientation of the first III-V compd. semiconductor and made of the III-V compd. semiconductor.

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Inventors:

SAWAKI NOBUHIKO
HIRAMATSU KAZUMASA
HANAI HISAYOSHI
MATSUSHIMA HIDETADA
MAEDA NAOYOSHI
ONO YOSHINOBU

Application Number:

JP26689897A

Publication Date:

May 21, 1999

Filing Date:

September 30, 1997

Export Citation:

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Assignee:

SUMITOMO CHEMICAL CO

International Classes:

H01L29/20; H01L21/205; H01L21/338; H01L29/778; H01L29/80; H01L29/812; H01L33/16; H01L33/32; H01L33/34; H01S5/00; H01S5/323; (IPC1-7): H01L29/20; H01L21/205; H01L21/338; H01L29/778; H01L29/80; H01L29/812; H01L33/00; H01S3/18

Attorney, Agent or Firm:

Takashi Kuboyama (1 person outside)

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