Title:
III-V COMPOUND SEMICONDUCTOR MATERIAL
Document Type and Number:
Japanese Patent JP2003137698
Kind Code:
A
Abstract:
To provide a III-V dilute magnetic semiconductor exhibiting ferromagnetism at normal temperature.
Manganese and oxygen are incorporated into GaN in an amount of 0.5 to 15 atom.% and a concentration of 1×1018 to 3×1020/cm3. The incorporated Mn forms a shallow acceptor level, and the GaN becomes a p-type semiconductor. The obtained GaN exhibits ferromagnetism at room temperature. It is possible to incorporate silicon in place of oxygen or to incorporate silicon together with oxygen.
Inventors:
SHIMIZU SABURO
SONODA SAKI
SONODA SAKI
Application Number:
JP2001329166A
Publication Date:
May 14, 2003
Filing Date:
October 26, 2001
Export Citation:
Assignee:
ULVAC CORP
International Classes:
C30B29/38; H01F1/40; H01F10/193; H01L33/32; H01L43/08; (IPC1-7): C30B29/38; H01F10/193; H01L33/00; H01L43/08; H01S5/323
Attorney, Agent or Firm:
Shigeo Ishijima (1 outside)
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